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| ANSALDO Ansaldo Trasporti s.p.a. Unita' Semiconduttori Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I - PHASE CONTROL THYRISTOR AT303 Repetitive voltage up to Mean on-state current Surge current 800 V 1100 A 12 kA FINAL SPECIFICATION feb 97 - ISSUE : 02 Symbol Characteristic Conditions Tj [C] 150 150 150 Value Unit BLOCKING V V V I I RRM RSM DRM RRM DRM Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak off-state voltage Repetitive peak reverse current Repetitive peak off-state current V=VRRM V=VDRM 800 900 800 50 50 V V V mA mA 150 150 CONDUCTING I I I V V r T (AV) T (AV) TSM Mean on-state current Mean on-state current Surge on-state current I t On-state voltage Threshold voltage On-state slope resistance 180 sin, 50 Hz, Th=55C, double side cooled 180 sin, 50 Hz, Tc=85C, double side cooled sine wave, 10 ms without reverse voltage On-state current = 1900 A 25 150 150 150 1100 1085 12 720 x1E3 1.45 0.8 0.340 A A kA As V V mohm I t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. Gate controlled delay time, typical Circuit commutated turn-off time, typical Reverse recovery charge Peak reverse recovery current Holding current, typical Latching current, typical From 75% VDRM up to 1200 A, gate 10V 5ohm Linear ramp up to 75% of VDRM VD=200V, gate source 20V, 10 ohm , tr=.5 s dV/dt = 20 V/s linear up to 80% VDRM di/dt=-60 A/s, I= 1000 A VR= 50 V VD=5V, gate open circuit VD=12V, tp=30s 150 150 25 150 25 25 200 500 1.5 A/s V/s s s C A 300 mA mA GATE V I V V I V P P GT GT GD FGM FGM RGM GM G Gate trigger voltage Gate trigger current Non-trigger gate voltage, min. Peak gate voltage (forward) Peak gate current Peak gate voltage (reverse) Peak gate power dissipation Average gate power dissipation VD=5V VD=5V VD=VDRM 25 25 150 3.5 200 0.25 30 10 5 V mA V V A V W W Pulse width 100 s 150 2 MOUNTING R R T F th(j-h) th(c-h) j Thermal impedance, DC Thermal impedance Operating junction temperature Mounting force Mass ORDERING INFORMATION : AT303 S 08 standard specification Junction to heatsink, double side cooled Case to heatsink, double side cooled 50 15 -30 / 150 8.0 / 9.0 85 C/kW C/kW C kN g VDRM&VRRM/100 AT303 PHASE CONTROL THYRISTOR FINAL SPECIFICATION feb 97 - ISSUE : 02 ANSALDO DISSIPATION CHARACTERISTICS SQUARE WAVE Th [C] 150 140 130 120 110 100 90 30 80 70 60 50 0 200 400 60 90 120 180 DC 600 800 IF(AV) [A] 1000 1200 1400 1600 PF(AV) [W] 2000 1800 180 DC 1600 1400 60 90 120 1200 30 1000 800 600 400 200 0 0 200 400 600 800 IF(AV) [A] 1000 1200 1400 1600 AT303 PHASE CONTROL THYRISTOR FINAL SPECIFICATION feb 97 - ISSUE : 02 ANSALDO DISSIPATION CHARACTERISTICS SINE WAVE Th [C] 150 140 130 120 110 100 90 60 30 80 70 60 50 0 200 400 600 90 120 180 800 IF(AV) [A] 1000 1200 1400 1600 PF(AV) [W] 2000 1800 1600 1400 1200 1000 800 600 400 200 0 0 200 400 600 800 IF(AV) [A] 1000 1200 1400 1600 30 90 60 120 180 AT303 PHASE CONTROL THYRISTOR FINAL SPECIFICATION feb 97 - ISSUE : 02 ANSALDO ON-STATE CHARACTERISTIC Tj = 150 C SURGE CHARACTERISTIC Tj = 150 C 3500 3000 12 10 2500 On-state Current [A] 8 ITSM [kA] 0.6 1.1 1.6 2000 1500 1000 500 0 On-state Voltage [V] 6 4 2 0 1 10 n cycles 100 TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 50.0 45.0 40.0 35.0 Zth j-h [C/kW] 30.0 25.0 20.0 15.0 10.0 5.0 0.0 0.001 0.01 0.1 t[s] 1 10 100 Cathode terminal type DIN 46244 - A 4.8 - 0.8 Gate terminal type AMP 60598 - 1 Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 m. In the interest of product improvement ANSALDO reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. |
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